US Patent Issued to TAIWAN SEMICONDUCTOR MANUFACTURING on April 7 for "Semiconductor device structure with metal gate stack" (Taiwanese Inventors)

ALEXANDRIA, Va., April 7 -- United States Patent no. 12,598,763, issued on April 7, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (Hsinchu, Taiwan).

"Semiconductor device structure with metal gate stack" was invented by Wang-Chun Huang (Kaohsiung, Taiwan), Ching-Wei Tsai (Hsinchu, Taiwan), Kuan-Lun Cheng (Hsin-Chu, Taiwan) and Chih-Hao Wang (Baoshan Township, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device structure is provided. The semiconductor device structure includes multiple first semiconductor nanostructures over a first semiconductor fin and multiple second semiconductor nanostructures over a second semiconductor fin. A topmost second semiconductor nanos...