US Patent Issued to TAIWAN SEMICONDUCTOR MANUFACTURING on April 7 for "High aspect ratio gate structure formation" (Taiwanese Inventors)

ALEXANDRIA, Va., April 7 -- United States Patent no. 12,598,796, issued on April 7, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING Co. LTD. (Hsinchu, Taiwan).

"High aspect ratio gate structure formation" was invented by Sai-Hooi Yeong (Hsinchu County, Taiwan), Chi-On Chui (Hsinchu City, Taiwan), Kai-Hsuan Lee (Hsinchu City, Taiwan), Kuan-Lun Cheng (Hsin-Chu, Taiwan) and Chih-Hao Wang (Hsinchu County, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method includes forming a fin over a substrate, forming an isolation structure on the substrate, and forming first and second mandrel patterns over the fin. The fin extends upwardly through the isolation structure. The fin extends lengthwise along a fir...