US Patent Issued to Taiwan Semiconductor Manufacturing on April 7 for "Epitaxial formation with treatment and semiconductor devices resulting therefrom" (Taiwanese, American Inventors)

ALEXANDRIA, Va., April 7 -- United States Patent no. 12,598,937, issued on April 7, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).

"Epitaxial formation with treatment and semiconductor devices resulting therefrom" was invented by Yi-Chen Lo (Zhubei, Taiwan), Ding-Kang Shih (New Taipei, Taiwan), Tsungyu Hung (Hsinchu, Taiwan), Chia-Ling Pai (Taichung, Taiwan), Pang-Yen Tsai (Jhubei, Taiwan), Li-Te Lin (Hsinchu, Taiwan) and Pinyen Lin (Rochester, N.Y.).

According to the abstract* released by the U.S. Patent & Trademark Office: "In an embodiment, a method includes forming a first semiconductor fin and a second semiconductor fin over a front-side of a substrate; etching a first recess in the first semiconductor...