US Patent Issued to Taiwan Semiconductor Manufacturing on April 7 for "Dielectric layers for semiconductor devices and methods of forming the same" (Taiwanese Inventors)

ALEXANDRIA, Va., April 7 -- United States Patent no. 12,598,767, issued on April 7, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).

"Dielectric layers for semiconductor devices and methods of forming the same" was invented by Yu-Lien Huang (Jhubei City, Taiwan), Tze-Liang Lee (Hsinchu, Taiwan), Jr-Hung Li (Chupei City, Taiwan), Chi-Hao Chang (Taoyuan, Taiwan), Hao-Yu Chang (Taipei City, Taiwan) and Pei-Yu Chou (Hsinchu, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "Methods of forming improved dielectric layers and semiconductor devices formed by the same are disclosed. In an embodiment, a semiconductor device includes a transistor structure on a semiconductor substrate;...