US Patent Issued to Taiwan Semiconductor Manufacturing on April 29 for "Memory device structure and manufacturing method thereof" (Taiwanese Inventors)

ALEXANDRIA, Va., June 9 -- United States Patent no. 12,289,892, issued on April 29, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).

"Memory device structure and manufacturing method thereof" was invented by Bo-Feng Young (Taipei, Taiwan), Sai-Hooi Yeong (Hsinchu County, Taiwan), Yu-Ming Lin (Hsinchu, Taiwan), Chao-I Wu (Hsinchu County, Taiwan) and Mauricio Manfrini (Hsinchu County, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A memory device and a manufacturing method are provided. The memory device includes a substrate, a transistor, and a memory cell. The substrate has a semiconductor device and a dielectric structure disposed on the semiconductor device. The transis...