US Patent Issued to Taiwan Semiconductor Manufacturing on April 21 for "Treatment of electrodes of MIM capacitors" (Taiwanese Inventors)

ALEXANDRIA, Va., April 21 -- United States Patent no. 12,610,564, issued on April 21, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).

"Treatment of electrodes of MIM capacitors" was invented by Shin-Hung Tsai (Hsinchu, Taiwan), Cheng-Hao Hou (Hsinchu, Taiwan), Da-Yuan Lee (Jhubei City, Taiwan) and Chi On Chui (Hsinchu, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method includes forming a first electrode, performing a first treatment process on a first oxide layer over the first electrode, wherein the first treatment process is performed using a first process gas comprising ammonia, depositing a high-k dielectric layer over the first oxide layer, forming a second ele...