ALEXANDRIA, Va., April 21 -- United States Patent no. 12,610,611, issued on April 21, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (Hsinchu, Taiwan).
"Semiconductor device structure and methods of forming the same" was invented by Ya-Yi Tsai (Hsinchu, Taiwan), Sheng-Yi Hsiao (Hsinchu, Taiwan), Shu-Yuan Ku (Hsinchu, Taiwan), Ryan Chia-Jen Chen (Hsinchu, Taiwan), Tzu-Ging Lin (Kaohsiung, Taiwan), Jih-Jse Lin (Taipei, Taiwan) and Yih-Ann Lin (Hsinchu, Taiwan).
According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device structure, along with methods of forming such, are described. The structure includes a fin disposed over a semiconductor substrate, and the fin has a first width. The s...