ALEXANDRIA, Va., April 21 -- United States Patent no. 12,610,614, issued on April 21, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (Hsinchu, Taiwan).
"Semiconductor device and manufacture thereof" was invented by Te-Hsin Chiu (Hsinchu, Taiwan), Shih-Wei Peng (Hsinchu, Taiwan), Meng-Hung Shen (Hsinchu, Taiwan) and Jiann-Tyng Tzeng (Hsinchu, Taiwan).
According to the abstract* released by the U.S. Patent & Trademark Office: "In some embodiments, a method of making a semiconductor device includes forming a recess in a first region of a first dielectric material, the first dielectric material at least partially embedding a semiconductor region, the recess having a first surface portion separated by a distance in a first dir...