US Patent Issued to TAIWAN SEMICONDUCTOR MANUFACTURING on April 21 for "Method of forming FinFET with protected low-k gate spacers" (Taiwanese Inventors)

ALEXANDRIA, Va., April 21 -- United States Patent no. 12,610,609, issued on April 21, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (Hsinchu, Taiwan).

"Method of forming FinFET with protected low-k gate spacers" was invented by Shu Ling Liao (Taichung City, Taiwan) and Chung-Chi Ko (Nantou, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "An embodiment is a device including a first fin extending from a substrate, a first gate stack over and along sidewalls of the first fin, a first gate spacer disposed along a sidewall of the first gate stack, a first epitaxial source/drain region in the first fin and adjacent the first gate spacer, the first epitaxial source/drain region, and a protec...