US Patent Issued to Taiwan Semiconductor Manufacturing on April 21 for "Interconnect structure including charged dielectric layers" (Taiwanese Inventors)

ALEXANDRIA, Va., April 21 -- United States Patent no. 12,610,813, issued on April 21, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).

"Interconnect structure including charged dielectric layers" was invented by Chien Hung Liu (Hsinchu County, Taiwan), Kuo-Ching Huang (Hsinchu, Taiwan), Harry-Hak-Lay Chuang (Zhubei, Taiwan) and Wei-Cheng Wu (Zhubei, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "The present disclosure relates to an integrated chip including a first dielectric layer overlying a substrate and a first conductive interconnect within the first dielectric layer. A bonding layer is over the first dielectric layer. The bonding layer includes a bonding dielectric ...