US Patent Issued to Taiwan Semiconductor Manufacturing on April 21 for "Hybrid Fin-dielectric semiconductor device" (Taiwanese Inventors)

ALEXANDRIA, Va., April 21 -- United States Patent no. 12,610,608, issued on April 21, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).

"Hybrid Fin-dielectric semiconductor device" was invented by Yi-Huan Chen (Hsin Chu City, Taiwan), Huan-Chih Yuan (Zhubei City, Taiwan), Yu-Chang Jong (Hsinchu City, Taiwan), Scott Yeh (Taoyuan City, Taiwan), Fei-Yun Chen (Hsinchu, Taiwan), Yi-Hao Chen (Taichung City, Taiwan) and Ting-Wei Chou (Taichung City, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "The present disclosure relates to a semiconductor device with a hybrid fin-dielectric region. The semiconductor device includes a substrate, a source region and a drain region laterally s...