US Patent Issued to Taiwan Semiconductor Manufacturing on April 15 for "Semiconductor devices with a source/drain barrier layer and methods of manufacture" (Taiwanese Inventors)

ALEXANDRIA, Va., June 5 -- United States Patent no. 12,278,145, issued on April 15, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).

"Semiconductor devices with a source/drain barrier layer and methods of manufacture" was invented by Chien-Wei Lee (Kaohsiung, Taiwan), Chii-Horng Li (Zhubei, Taiwan), Bang-Ting Yan (Hsinchu, Taiwan), Bo-Yu Lai (Taipei, Taiwan), Wei-Yang Lee (Taipei, Taiwan) and Chia-Pin Lin (Xinpu Township, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "Semiconductor devices and methods of fabricating the semiconductor devices are described herein. The method includes steps for patterning fins in a multilayer stack and forming an opening in a fin as an init...