ALEXANDRIA, Va., April 15 -- United States Patent no. 12,604,519, issued on April 14, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (Hsinchu, Taiwan).
"Semiconductor structure having multiple nanostructures with different widths and method for forming the same" was invented by Ta-Chun Lin (Hsinchu, Taiwan) and Ming-Heng Tsai (Taipei, Taiwan).
According to the abstract* released by the U.S. Patent & Trademark Office: "Semiconductor structures and methods for manufacturing the same are provided. The semiconductor structure includes first nanostructures formed over a substrate along a first direction, and second nanostructures formed over the substrate along the first direction. The semiconductor structure includes a first ...