ALEXANDRIA, Va., April 15 -- United States Patent no. 12,603,265, issued on April 14, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).
"Method for improving deposition process" was invented by Jung-Tang Wu (Kaohsiung, Taiwan), Szu-Hua Wu (Zhubei, Taiwan), Chin-Szu Lee (Taoyuan, Taiwan) and Yi-Lin Wang (Kaohsiung, Taiwan).
According to the abstract* released by the U.S. Patent & Trademark Office: "A method includes placing a wafer on a wafer holder, depositing a film on a front surface of the wafer, and blowing a gas through ports in a redistributor onto a back surface of the wafer at a same time the deposition is performed. The gas is selected from a group consisting of nitrogen (N2), He, Ne, and combinations...