US Patent Issued to Taiwan Semiconductor Manufacturing on April 14 for "Memory cell, semiconductor device having the same, and methods of manufacturing the same" (Taiwanese, American Inventors)

ALEXANDRIA, Va., April 15 -- United States Patent no. 12,604,676, issued on April 14, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).

"Memory cell, semiconductor device having the same, and methods of manufacturing the same" was invented by Yu-Chao Lin (Hsinchu, Taiwan), Yu-Sheng Chen (Taoyuan, Taiwan), Carlos H. Diaz (Los Altos Hills, Calif.) and Da-Ching Chiou (Hsinchu, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A memory cell includes a bottom electrode, a storage element layer, a first buffer layer, and a top electrode. The storage element layer is disposed over the bottom electrode. The first buffer layer is interposed between the storage element layer and the bo...