US Patent Issued to Taiwan Semiconductor Manufacturing on April 14 for "Compact electrical connection that can be used to form an SRAM cell and method of making the same" (Taiwanese Inventors)

ALEXANDRIA, Va., April 15 -- United States Patent no. 12,604,452, issued on April 14, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).

"Compact electrical connection that can be used to form an SRAM cell and method of making the same" was invented by Yu-Kuan Lin (Hsinchu, Taiwan), Kuo-Yi Chao (Hsinchu, Taiwan), Chang-Ta Yang (Hsinchu, Taiwan), Mei-Yun Wang (Hsinchu, Taiwan) and Ping-Wei Wang (Hsinchu, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "An integrated circuit structure in which a gate overlies channel region in an active area of a first transistor. The first transistor includes a channel region, a source region and a drain region. A conductive contact is coupled...