ALEXANDRIA, Va., May 26 -- United States Patent no. 12,640,190, issued on May 26, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (Hsinchu, Taiwan) and TSMC NANJING COMPANY Ltd. (Nanjing, China).

"Memory circuit with level shifter circuit and method of operating same" was invented by Chia-Cheng Chen (Hsinchu, Taiwan), Jun Xie (Hisnchu, Taiwan), Ching-Wei Wu (Hsinchu, Taiwan), Luping Kong (Hsinchu, Taiwan) and Chien-Yu Huang (Hsinchu, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A memory circuit includes a first and second inverter, and a level shifter circuit. The first inverter is coupled to a first voltage supply, and configured to generate a first input signal in response to a sec...