ALEXANDRIA, Va., March 17 -- United States Patent no. 12,580,016, issued on March 17, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (Hsinchu, Taiwan) and TSMC NANJING COMPANY Ltd. (Nanjing, China).
"Memory device" was invented by Zhou Yang (Lu'an, China), Ying-Jhih Shih (Taichung City, Taiwan), Chien-Yu Huang (Taoyuan City, Taiwan), Jun-Cheng Liu (Nanjing City, China) and Ching-Wei Wu (Nantou County, Taiwan).
According to the abstract* released by the U.S. Patent & Trademark Office: "A memory device is provided, including at least one inverter, a transistor coupled between the at least one inverter and a bit line, and an assist circuit coupled to the bit line, configured to provide a negative voltage to the bit line, and...