ALEXANDRIA, Va., Aug. 12 -- United States Patent no. 12,707,652, issued on Aug. 11, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (Hsinchu, Taiwan) and NATIONAL YANG MING.CHIAO TUNG UNIVERSITY (Hsinchu City, Taiwan).

"Capacitor and method for forming the same" was invented by Hsin-Cheng Lin (Taipei City, Taiwan), Tao Chou (New Taipei City, Taiwan) and Chee-Wee Liu (Taipei City, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method includes forming a sacrificial multi-layer stack including first, second, and third sacrificial layers stacked in a vertical direction on a substrate; removing the first sacrificial layer to form a first space; depositing a first dielectric layer and a fi...