ALEXANDRIA, Va., March 24 -- United States Patent no. 12,588,431, issued on March 24, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (Hsinchu, Taiwan) and NATIONAL YANG MING CHIAO TUNG UNIVERSITY (Hsinchu City, Taiwan).
"Semiconductor device with two-dimensional materials and forming method thereof" was invented by Shu-Jui Chang (Hsinchu County, Taiwan), Shin-Yuan Wang (Chiayi City, Taiwan), Yu-Che Huang (Taipei City, Taiwan), Chao-Hsin Chien (Hsinchu City, Taiwan) and Chenming Hu (Oakland, Calif.).
According to the abstract* released by the U.S. Patent & Trademark Office: "A method includes following steps. A single-crystalline two-dimensional (2D) semiconductor layer is formed over a substrate. A single-crystalline 2D m...