ALEXANDRIA, Va., Oct. 21 -- United States Patent no. 12,770,703, issued on Oct. 20, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (Hsinchu, Taiwan) and NATIONAL TSING HUA UNIVERSITY (Hsinchu City, Taiwan).
"Memory device and operating method thereof" was invented by Win-San Khwa (Taipei City, Taiwan), De-Qi You (Chiayi County, Taiwan), Jui-Jen Wu (Hsinchu, Taiwan) and Meng-Fan Chang (Taichung City, Taiwan).
According to the abstract* released by the U.S. Patent & Trademark Office: "A memory device includes a memory array storing weights; a pre-charging circuit coupled to the memory array through data lines and charging, in response to a pre-charge signal, at least one data line in the data lines to a read voltage in a re...