ALEXANDRIA, Va., June 16 -- United States Patent no. 12,308,368, issued on May 20, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsin-Chu, Taiwan) and National Taiwan University (Taipei, Taiwan).

"Method for non-resist nanolithography" was invented by Miin-Jang Chen (Taipei, Taiwan), Kuen-Yu Tsai (Taipei, Taiwan) and Chee-Wee Liu (Hsinchu, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method for forming a semiconductor device is provided. A first patterned mask is formed on the substrate, the first patterned mask having a first opening therein. A second patterned mask is formed on the substrate in the first opening, the first patterned mask and the second patterned mask forming a com...