US Patent Issued to TAIWAN SEMICONDUCTOR MANUFACTURING, NATIONAL TAIWAN UNIVERSITY on July 21 for "Semiconductor device and method for forming the same" (Taiwanese Inventors)

ALEXANDRIA, Va., July 21 -- United States Patent no. 12,690,250, issued on July 21, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (Hsinchu, Taiwan) and NATIONAL TAIWAN UNIVERSITY (Taipei, Taiwan).

"Semiconductor device and method for forming the same" was invented by Shih-Yen Lin (New Taipei City, Taiwan) and Po-Cheng Tsai (Taichung City, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device includes a substrate. A 2-D material channel layer is over the substrate, in which the 2-D material channel layer includes a channel region and source/drain regions on opposite sides of the channel region. Source/drain metals are over of the source/drain regions of the 2-D materia...