US Patent Issued to TAIWAN SEMICONDUCTOR MANUFACTURING, NATIONAL TAIWAN UNIVERSITY on July 15 for "Semiconductor device and method for forming the same" (Taiwanese Inventors)

ALEXANDRIA, Va., July 16 -- United States Patent no. 12,363,981, issued on July 15, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (Hsinchu, Taiwan) and NATIONAL TAIWAN UNIVERSITY (Taipei, Taiwan).

"Semiconductor device and method for forming the same" was invented by Shih-Yen Lin (New Taipei, Taiwan) and Po-Cheng Tsai (Taichung, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method includes forming a gate dielectric layer over a gate electrode layer; forming a 2-D material layer over the gate dielectric layer; forming source/drain contacts over source/drain regions of the 2-D material layer, in which each of the source/drain contacts includes an antimonene layer and a metal layer o...