US Patent Issued to TAIWAN SEMICONDUCTOR MANUFACTURING, NATIONAL TAIWAN UNIVERSITY on July 15 for "Semiconductor device and method for fabricating the same" (Taiwanese Inventors)

ALEXANDRIA, Va., July 16 -- United States Patent no. 12,362,183, issued on July 15, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (Hsinchu, Taiwan) and NATIONAL TAIWAN UNIVERSITY (Taipei, Taiwan).

"Semiconductor device and method for fabricating the same" was invented by Chun-Yuan Wang (Hsinchu, Taiwan) and Miin-Jang Chen (Taipei, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method for fabricating a semiconductor device is provided. The method includes depositing a gate dielectric layer over a semiconductor substrate; depositing a work function layer over the gate dielectric layer by an atomic layer deposition (ALD) process, wherein the work function layer comprises a metal eleme...