US Patent Issued to TAIWAN SEMICONDUCTOR MANUFACTURING, NATIONAL TAIWAN UNIVERSITY on July 14 for "Memory device and manufacturing method thereof" (Taiwanese Inventors)

ALEXANDRIA, Va., July 14 -- United States Patent no. 12,684,784, issued on July 14, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING Co. LTD. (Hsinchu, Taiwan) and NATIONAL TAIWAN UNIVERSITY (Taipei City, Taiwan).

"Memory device and manufacturing method thereof" was invented by Jenn-Gwo Hwu (Taipei City, Taiwan) and Tzu-Hao Chiang (New Taipei City, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A memory device includes a transistor, a memory cell, and an interconnect layer. The transistor includes a bottom source/drain portion, a channel portion, and a top source/drain portion stacked from bottom to top and a gate structure surrounding the channel portion. The memory cell includes a nanowire bottom ...