US Patent Issued to TAIWAN SEMICONDUCTOR MANUFACTURING, NATIONAL TAIWAN UNIVERSITY on Feb. 17 for "Memory device and formation method thereof" (Taiwanese Inventors)

ALEXANDRIA, Va., Feb. 17 -- United States Patent no. 12,557,558, issued on Feb. 17, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (Hsinchu, Taiwan) and NATIONAL TAIWAN UNIVERSITY (Taipei, Taiwan).

"Memory device and formation method thereof" was invented by Ya-Jui Tsou (Taichung, Taiwan), Jih-Chao Chiu (New Taipei, Taiwan), Huan-Chi Shih (Chiayi County, Taiwan), Chee-Wee Liu (Taipei, Taiwan), Shao-Yu Lin (Taichung, Taiwan) and Chih-Lin Wang (Hsinchu County, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method of forming a memory device including forming a bottom electrode via (BEVA) in a dielectric layer, forming a magnetic tunnel junction (MTJ) multilayer structure over the BEVA,...