US Patent Issued to TAIWAN SEMICONDUCTOR MANUFACTURING, NATIONAL TAIWAN UNIVERSITY on Aug. 26 for "Integrated circuit device and method for fabricating the same" (Taiwanese Inventors)

ALEXANDRIA, Va., Aug. 26 -- United States Patent no. 12,402,334, issued on Aug. 26, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (Hsinchu, Taiwan) and NATIONAL TAIWAN UNIVERSITY (Taipei, Taiwan).

"Integrated circuit device and method for fabricating the same" was invented by Jenn-Gwo Hwu (Taipei, Taiwan) and Jian-Yu Lin (Taipei, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "An integrated circuit device includes a semiconductor structure, a tunneling layer, a top electrode, a passivation layer, and a conductive feature. The semiconductor structure has a base portion and a protruding portion over a top surface of the base portion. The tunneling layer is over a top surface of the prot...