US Patent Issued to TAIWAN SEMICONDUCTOR MANFACTURING on Aug. 25 for "Method of manufacturing FinFET devices with backside power rail and backside self-aligned via" (Taiwanese Inventors)

ALEXANDRIA, Va., Aug. 25 -- United States Patent no. 12,720,795, issued on Aug. 25, was assigned to TAIWAN SEMICONDUCTOR MANFACTURING Co. LTD. (Hsinchu, Taiwan).

"Method of manufacturing FinFET devices with backside power rail and backside self-aligned via" was invented by Shi Ning Ju (Hsinchu City, Taiwan), Kuo-Cheng Chiang (Hsinchu County, Taiwan), Chih-Hao Wang (Hsinchu County, Taiwan) and Kuan-Lun Cheng (Hsin-Chu, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor structure includes a power rail on a back side of the semiconductor structure, a first interconnect structure on a front side of the semiconductor structure, and a source feature, a drain feature, a first semiconductor fin, a...