ALEXANDRIA, Va., Dec. 16 -- United States Patent no. 12,499,933, issued on Dec. 16, was assigned to TAIWAN SEICONDUCTOR MANUFACTURING Co. LTD. (Hsinchu, Taiwan).
"SRAM structures" was invented by Ping-Wei Wang (Hsin-Chu, Taiwan), Chia-Hao Pao (Kaohsiung, Taiwan), Choh Fei Yeap (Hsinchu, Taiwan), Yu-Kuan Lin (Taipei, Taiwan) and Kian-Long Lim (Hsinchu, Taiwan).
According to the abstract* released by the U.S. Patent & Trademark Office: "Memory devices are provided. In an embodiment, a memory device includes a static random access memory (SRAM) array. The SRAM array includes a static random access memory (SRAM) array. The SRAM array includes a first subarray including a plurality of first SRAM cells and a second subarray including a pluralit...