US Patent Issued to TAIWAN-ASIA SEMICONDUCTOR on Nov. 3 for "Silicon carbide opto-thyristor and method for manufacturing the same" (Taiwanese Inventors)

ALEXANDRIA, Va., Nov. 3 -- United States Patent no. 12,787,459, issued on Nov. 3, was assigned to TAIWAN-ASIA SEMICONDUCTOR Corp. (Hsinchu City, Taiwan).

"Silicon carbide opto-thyristor and method for manufacturing the same" was invented by Di-Bao Wang (Hsinchu City, Taiwan) and Wen-Chung Lee (Hsinchu City, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "The present disclosure provides a silicon carbide (SiC) opto-thyristor and a method for manufacturing the same. The SiC opto-thyristor includes a SiC substrate, a SiC light emitter and a SiC light-sensitive thyristor. In the method, a SiC epitaxy is mainly formed on the SiC substrate with the doped P-type and N-type semiconductor materials to define th...