US Patent Issued to Suzhou Littelfuse OVS on July 7 for "Current sensor with inverted shielding element" (Chinese Inventor)

ALEXANDRIA, Va., July 7 -- United States Patent no. 12,677,404, issued on July 7, was assigned to Suzhou Littelfuse OVS Co. Ltd. (Suzhou, China).

"Current sensor with inverted shielding element" was invented by Tao Chen (Suzhou, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "A sensor device may include a substrate within the housing, a sensing element coupled to the substrate, and a shielding element surrounding the sensing element, wherein the shielding element extends through an opening of the substrate. The sensor device may further include a busbar extending through the housing, wherein the shielding element further extends through an indentation along at least one side of the busbar."

The patent ...