US Patent Issued to Suzhou Institute of Nano-Tech and Nano-Bionics (Sinano), CAS on March 31 for "Gallium nitride nano superstructure and preparation method thereof and gallium nitride-based laser" (Chinese Inventors)

ALEXANDRIA, Va., March 31 -- United States Patent no. 12,591,085, issued on March 31, was assigned to Suzhou Institute of Nano-Tech and Nano-Bionics (Sinano), CAS (Suzhou, China).

"Gallium nitride nano superstructure and preparation method thereof and gallium nitride-based laser" was invented by Miao Wang (Suzhou, China), Juemin Yi (Suzhou, China), Jianfeng Wang (Suzhou, China) and Ke Xu (Suzhou, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "The present invention relates to a gallium nitride nano superstructure and a preparation method thereof. The gallium nitride nano superstructure is used for realizing circularly polarized light output of the gallium nitride-based laser. The gallium nitride nano su...