US Patent Issued to SUNRISE MEMORY on May 5 for "Dynamic random-access memory (DRAM) configured for block transfers and method thereof" (California Inventor)

ALEXANDRIA, Va., May 5 -- United States Patent no. 12,619,563, issued on May 5, was assigned to SUNRISE MEMORY Corp. (San Jose, Calif.).

"Dynamic random-access memory (DRAM) configured for block transfers and method thereof" was invented by Weidong Zhang (San Ramon, Calif.).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method and system for building a block data transfer (BT) DRAM provides a solution to fix the performance gap between memory and processor. The data conversion time per word between the analog circuits and the digital circuits inside the BT DRAM is smaller than the processor clock cycle time, that enables the average data transfer speed of a BT DRAM to match to the operation speed of a proce...