US Patent Issued to SUNRISE MEMORY on May 19 for "Memory system implementing write abort operation for reduced read latency" (Israeli, Japanese, American Inventors)

ALEXANDRIA, Va., May 19 -- United States Patent no. 12,632,177, issued on May 19, was assigned to SUNRISE MEMORY Corp. (San Jose, Calif.).

"Memory system implementing write abort operation for reduced read latency" was invented by Masahiro Yoshihara (Yokohama, Japan), Tz-Yi Liu (Palo Alto, Calif.), Raul Adrian Cernea (Santa Clara, Calif.), Shay Fux (Kfar Yona, Israel), Erez Landau (Netanya, Israel) and Sagie Goldenberg (Gaaton, Israel).

According to the abstract* released by the U.S. Patent & Trademark Office: "A memory system including a memory device of storage transistors organized in multiple memory banks where the memory device interacts with a controller device to perform read and write operations. In some embodiments, the controlle...