US Patent Issued to SUNRISE MEMORY on June 9 for "Fabrication method for a three-dimensional memory array of thin-film ferroelectric transistors formed with an oxide semiconductor channel" (California Inventors)

ALEXANDRIA, Va., June 9 -- United States Patent no. 12,652,804, issued on June 9, was assigned to SUNRISE MEMORY Corp. (San Jose, Calif.).

"Fabrication method for a three-dimensional memory array of thin-film ferroelectric transistors formed with an oxide semiconductor channel" was invented by Jie Zhou (San Jose, Calif.) and Usha Raghuram (Saratoga, Calif.).

According to the abstract* released by the U.S. Patent & Trademark Office: "A fabrication process for a memory structure including three-dimensional arrays of thin-film ferroelectric storage transistors is disclosed. In some embodiments, the ferroelectric storage transistors are organized in three-dimensional arrays of horizontal NOR memory strings. In some embodiments, the fabricatio...