US Patent Issued to SUNRISE MEMORY on Feb. 10 for "Thin-film storage transistor with ferroelectric storage layer" (California, Arizona Inventors)

ALEXANDRIA, Va., Feb. 11 -- United States Patent no. 12,550,382, issued on Feb. 10, was assigned to SUNRISE MEMORY Corp. (San Jose, Calif.).

"Thin-film storage transistor with ferroelectric storage layer" was invented by George Samachisa (Atherton, Calif.), Vinod Purayath (Sedona, Ariz.), Wu-Yi Henry Chien (San Jose, Calif.) and Eli Harari (Saratoga, Calif.).

According to the abstract* released by the U.S. Patent & Trademark Office: "By harnessing the ferroelectric phases in the charge storage material of thin-film storage transistors of a 3-dimensional array of NOR memory strings, the storage transistors are adapted to operate as ferroelectric field-effect transistors ("FeFETs"), thereby providing a very high-speed, high-density memory a...