US Patent Issued to SUNRISE MEMORY on Dec. 2 for "Wear-level control circuit for memory module" (Israeli Inventors)

ALEXANDRIA, Va., Dec. 2 -- United States Patent no. 12,487,918, issued on Dec. 2, was assigned to SUNRISE MEMORY Corp. (San Jose, Calif.).

"Wear-level control circuit for memory module" was invented by Shay Fux (Kfar Yona, Israel), Amotz Yagev (Sdot Yam, Israel) and Sagie Goldenberg (Gaaton, Israel).

According to the abstract* released by the U.S. Patent & Trademark Office: "A memory device includes: (a) one or more memory circuits having physical memory pages identified by physical page addresses, each physical memory page being provided to store a memory page; and (b) a control circuit configured for managing read or write operations in each memory circuit. The control circuit manages both a wear-leveling scheme and read and write opera...