US Patent Issued to SUNRISE MEMORY on Aug. 26 for "Three-dimensional memory string array of thin-film ferroelectric transistors formed with an oxide semiconductor channel" (California Inventors)

ALEXANDRIA, Va., Aug. 26 -- United States Patent no. 12,402,319, issued on Aug. 26, was assigned to SUNRISE MEMORY Corp. (San Jose, Calif.).

"Three-dimensional memory string array of thin-film ferroelectric transistors formed with an oxide semiconductor channel" was invented by Wu-Yi Henry Chien (San Jose, Calif.) and Eli Harari (Saratoga, Calif.).

According to the abstract* released by the U.S. Patent & Trademark Office: "A memory structure includes storage transistors organized as horizontal NOR memory strings where the storage transistors are thin-film ferroelectric field-effect transistors (FeFETs) having a ferroelectric gate dielectric layer formed adjacent an oxide semiconductor channel region. The ferroelectric storage transistors ...