US Patent Issued to SUMITOMO HEAVY INDUSTRIES ION TECHNOLOGY on Nov. 11 for "Ion implantation method, ion implanter, and method for manufacturing semiconductor device" (Japanese Inventors)

ALEXANDRIA, Va., Nov. 11 -- United States Patent no. 12,469,677, issued on Nov. 11, was assigned to SUMITOMO HEAVY INDUSTRIES ION TECHNOLOGY Co. LTD. (Tokyo).

"Ion implantation method, ion implanter, and method for manufacturing semiconductor device" was invented by Kazuhisa Ishibashi (Ehime, Japan) and Toshio Yumiyama (Ehime, Japan).

According to the abstract* released by the U.S. Patent & Trademark Office: "An ion implantation method includes generating a first scan beam, based on a first scan signal, measuring a beam current of the first scan beam by using a beam measurement device at a plurality of measurement positions, calculating a beam current matrix, based on a time waveform of the beam current measured by the beam measurement de...