US Patent Issued to Sumitomo Electric Industries on Sept. 16 for "Gallium arsenide single crystal substrate and method of manufacturing same" (Japanese Inventors)

ALEXANDRIA, Va., Sept. 17 -- United States Patent no. 12,416,097, issued on Sept. 16, was assigned to Sumitomo Electric Industries Ltd. (Osaka, Japan).

"Gallium arsenide single crystal substrate and method of manufacturing same" was invented by Makoto Kiyama (Osaka, Japan), Yoshihiro Saito (Osaka, Japan), Yutaka Hoshina (Osaka, Japan) and Yojiro Nakayama (Osaka, Japan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A gallium arsenide single crystal substrate includes a main surface having a circular shape and has a first integrated intensity ratio or a second integrated intensity ratio. The first integrated intensity ratio and the second integrated intensity ratio are obtained from a spectrum, based on a pred...