US Patent Issued to Sumitomo Electric Industries on Dec. 30 for "Silicon carbide semiconductor device" (Japanese Inventors)

ALEXANDRIA, Va., Dec. 31 -- United States Patent no. 12,513,950, issued on Dec. 30, was assigned to Sumitomo Electric Industries Ltd. (Osaka, Japan).

"Silicon carbide semiconductor device" was invented by Takeyoshi Masuda (Osaka, Japan) and Ryouji Kosugi (Tsukuba, Japan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A super junction layer alternately has a first region and a second region. An element layer is provided above the super junction layer. The first region has a first portion and a second portion located between the first portion and a first main surface. The second region has a third portion in contact with the first portion and a fourth portion in contact with the second portion and located betwe...