US Patent Issued to Sumitomo Electric Device Innovations, Sumitomo Electric Industries on April 21 for "Method for manufacturing epitaxial substrate by irradiating a surface of a group iii nitride semiconductor layer with ultraviolet light in an atmosphere containing oxygen" (Japanese Inventors)

ALEXANDRIA, Va., April 21 -- United States Patent no. 12,606,933, issued on April 21, was assigned to Sumitomo Electric Device Innovations Inc. (Yokohama, Japan) and Sumitomo Electric Industries Ltd. (Osaka, Japan).

"Method for manufacturing epitaxial substrate by irradiating a surface of a group iii nitride semiconductor layer with ultraviolet light in an atmosphere containing oxygen" was invented by Kohei Miyashita (Yokohama, Japan), Takeshi Kishi (Yokohama, Japan) and Takumi Yonemura (Osaka, Japan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method for manufacturing an epitaxial substrate includes the steps of: epitaxially growing a group III nitride semiconductor layer on a substrate; removing the su...