US Patent Issued to Sumitomo Chemical on Oct. 14 for "Nitride semiconductor substrate manufacturing method, and laminated structure" (Japanese Inventor)

ALEXANDRIA, Va., Oct. 21 -- United States Patent no. 12,446,281, issued on Oct. 14, was assigned to Sumitomo Chemical Co. Ltd. (Tokyo).

"Nitride semiconductor substrate manufacturing method, and laminated structure" was invented by Takehiro Yoshida (Hitachi, Japan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method for manufacturing a nitride semiconductor substrate by using a vapor phase growth method, including: a step of preparing a base substrate of a single crystal of a group III nitride semiconductor and in which a low index crystal plane closest to a main surface is a (0001) plane; an etching step of the base substrate to roughen the main surface; a first step of growing a first layer by epitaxial...