ALEXANDRIA, Va., Sept. 1 -- United States Patent no. 12,727,417, issued on Sept. 1, was assigned to SUMCO Corp. (Tokyo).
"Wafer polishing method and silicon wafer" was invented by Kazuaki Kozasa (Tokyo), Katsuhisa Sugimori (Tokyo), Kazuki Nishioka (Tokyo) and Tsuyoshi Morita (Tokyo).
According to the abstract* released by the U.S. Patent & Trademark Office: "Provided is a wafer polishing method capable of improving nanotopography characteristics within a site on the surface of a wafer having a 2 mm square area or a small area equivalent thereto and a silicon wafer polished by the wafer polishing method, and further provided is a method of chemical-mechanical polishing the surface of a wafer through a polishing step in two or more polishin...