US Patent Issued to SUMCO on Oct. 27 for "Method of estimating oxygen concentration in silicon single crystal, method of manufacturing silicon single crystal, and silicon single crystal manufacturing apparatus" (Japanese Inventors)

ALEXANDRIA, Va., Oct. 27 -- United States Patent no. 12,774,987, issued on Oct. 27, was assigned to SUMCO Corp. (Tokyo).

"Method of estimating oxygen concentration in silicon single crystal, method of manufacturing silicon single crystal, and silicon single crystal manufacturing apparatus" was invented by Ippei Shimozaki (Tokyo) and Keiichi Takanashi (Tokyo).

According to the abstract* released by the U.S. Patent & Trademark Office: "To provide a method of estimating an oxygen concentration in a silicon single crystal, a method of manufacturing a silicon single crystal, and a silicon single crystal manufacturing apparatus capable of manufacturing silicon single crystals having constant quality by preventing polarization of the oxygen conc...