ALEXANDRIA, Va., Jan. 28 -- United States Patent no. 12,534,820, issued on Jan. 27, was assigned to SUMCO Corp. (Tokyo).
"Method for growing silicon single crystal" was invented by Yasufumi Kawakami (Nagasaki, Japan) and Kazuyoshi Sakatani (Nagasaki, Japan).
According to the abstract* released by the U.S. Patent & Trademark Office: "A method of growing monocrystalline silicon through a Czochralski process uses a monocrystalline silicon growth device, the device including: a chamber; a crucible; a heater configured to heat a silicon melt contained in the crucible, in which the heater includes: an upper heater configured to heat an upper portion of the crucible; and a lower heater configured to heat a lower portion of the crucible; and a pu...