US Patent Issued to SUMCO on April 7 for "Heating part of silicon single crystal manufacturing device, convection pattern control method for silicon melt, silicon single crystal manufacturing method, silicon wafer manufacturing method, silicon single crystal manufacturing device, and convection pattern control system for silicon melt" (Japanese Inventors)

ALEXANDRIA, Va., April 7 -- United States Patent no. 12,595,585, issued on April 7, was assigned to SUMCO Corp. (Tokyo).

"Heating part of silicon single crystal manufacturing device, convection pattern control method for silicon melt, silicon single crystal manufacturing method, silicon wafer manufacturing method, silicon single crystal manufacturing device, and convection pattern control system for silicon melt" was invented by Ryusuke Yokoyama (Tokyo) and Wataru Sugimura (Tokyo).

According to the abstract* released by the U.S. Patent & Trademark Office: "A heating portion heats a silicon melt in a quartz crucible. The heating portion includes: a heat generation portion integrally molded into a cylinder; and four power supply portions fo...