US Patent Issued to STMicroelectronics on Oct. 14 for "Memory cell with contiguous P-well and N-well structures" (Italian Inventors)

ALEXANDRIA, Va., Oct. 21 -- United States Patent no. 12,446,218, issued on Oct. 14, was assigned to STMicroelectronics S.r.l. (Agrate Brianza, Italy).

"Memory cell with contiguous P-well and N-well structures" was invented by Roberto Bregoli (Offlaga, Italy), Alessandro Ferretti (Villanuova Sul Clisi, Italy) and Federica Rosa (Corsico, Italy).

According to the abstract* released by the U.S. Patent & Trademark Office: "A non-volatile memory cell includes a first well of a first conductivity type and a second well of a second conductivity type in a body adjacent to each other; a first conduction region, a second conduction region and a third conduction region in the first well, the first, second and third conduction regions being of the sec...