US Patent Issued to STMicroelectronics on June 9 for "Power MOSFET driver circuit arrangement and corresponding control method" (Italian Inventors)

ALEXANDRIA, Va., June 9 -- United States Patent no. 12,652,042, issued on June 9, was assigned to STMicroelectronics S.r.l. (Agrate Brianza, Italy).

"Power MOSFET driver circuit arrangement and corresponding control method" was invented by Francesco Pinzin (Varese, Italy), Alessandro Bertolini (Vermiglio, Italy) and Alberto Cattani (Cislago, Italy).

According to the abstract* released by the U.S. Patent & Trademark Office: "A power MOSFET driver circuit includes a feedback circuit configured to supply a feedback signal that signals when a gate voltage of the power MOSFET crosses a plateau value and the power MOSFET switches conduction state. The feedback circuit includes a comparator with a replica MOSFET of the power MOSFET, with scaled ...